? semiconductor components industries, llc, 2001 october, 2001 ? rev. 1 1 publication order number: mpsa05/d mpsa05, mpsa06, mpsa55, MPSA56 mpsa06 and MPSA56 are preferred devices amplifier transistors voltage and current are negative for pnp transistors collector 3 2 base 1 emitter style 1 mpsa05, mpsa06 npn collector 3 2 base 1 emitter style 1 mpsa55, MPSA56 pnp maximum ratings rating symbol value unit collector ?emitter voltage mpsa05, mpsa55 mpsa06, MPSA56 v ceo 60 80 vdc collector ?base voltage mpsa05, mpsa55 mpsa06, MPSA56 v cbo 60 80 vdc emitter ?base voltage v ebo 4.0 vdc collector current ? continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r q ja (note 1.) 200 c/w thermal resistance, junction to case r q jc 83.3 c/w 1. r ja is measured with the device soldered into a typical printed circuit board. device package shipping ordering information mpsa05 to?92 http://onsemi.com to?92 case 29 style 1 5000 units/box 3 2 1 preferred devices are recommended choices for future use and best overall value. mpsa05rlra to?92 2000/tape & reel mpsa05rlrm to?92 2000/ammo pack mpsa06 to?92 5000 units/box mpsa06rlra to?92 2000/tape & reel mpsa06rlrm to?92 2000/ammo pack marking diagram mps axxx yww mpsa06rlrp to?92 2000/ammo pack npn mpsa05, mpsa06 pnp mpsa55, MPSA56 mpsa55 to?92 5000 units/box mpsa55rlra to?92 2000/tape & reel MPSA56 to?92 5000 units/box MPSA56rlra to?92 2000/tape & reel MPSA56rlrm to?92 2000/ammo pack MPSA56rlrp to?92 2000/ammo pack mpsa = specific device code xxx = 05, 06, 55 or 56 y = year ww = work week .com .com .com .com 4 .com u datasheet
mpsa05, mpsa06, mpsa55, MPSA56 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 2.) (i c = 1.0 madc, i b = 0) mpsa05, mpsa55 mpsa06, MPSA56 v (br)ceo 60 80 ? ? vdc emitter ?base breakdown voltage (i e = 100 m adc, i c = 0) v (br)ebo 4.0 ? vdc collector cutoff current (v ce = 60 vdc, i b = 0) i ces ? 0.1 m adc collector cutoff current (v cb = 60 vdc, i e = 0) mpsa05, mpsa55 (v cb = 80 vdc, i e = 0) mpsa06, MPSA56 i cbo ? ? 0.1 0.1 m adc on characteristics dc current gain (i c = 10 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 100 100 ? ? ? collector ?emitter saturation voltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? 0.25 vdc base?emitter on voltage (i c = 100 madc, v ce = 1.0 vdc) v be(on) ? 1.2 vdc small?signal characteristics current ?gain ? bandwidth product (note 3.) (i c = 10 ma, v ce = 2.0 v, f = 100 mhz) mpsa05 mpsa06 (i c = 100 madc, v ce = 1.0 vdc, f = 100 mhz) mpsa55 MPSA56 f t 100 50 ? ? mhz 2. pulse test: pulse width 300 s, duty cycle 2%. 3. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. switching time test circuits output turn-on time -1.0 v v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn-off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 5.0 s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities .com .com .com .com .com 4 .com u datasheet
mpsa05, mpsa06, mpsa55, MPSA56 http://onsemi.com 3 figure 2. mpsa05/06 current?gain e bandwidth product figure 3. mpsa55/56 current?gain e bandwidth product figure 4. mpsa05/06 capacitance figure 5. mpsa55/56 capacitance figure 6. mpsa05/06 switching time figure 7. mpsa55/56 switching time 100 200 2.0 i c , collector current (ma) 300 200 100 70 50 30 i c , collector current (ma) -100 -200 -10 200 100 70 50 20 10 100 0.1 v r , reverse voltage (volts) 80 60 40 20 10 8.0 v r , reverse voltage (volts) -1.0 -100 -0.1 100 70 50 30 20 10 -2.0 20 v ce = 2.0 v t j = 25 c v ce = -2.0 v t j = 25 c t j = 25 c f t , current-gain - bandwidth product (mhz) npn pnp c, capacitance (pf) 3.0 5.0 7.0 10 20 30 50 70 -2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70 30 f t , current-gain - bandwidth product (mhz) 50 1.0 2.0 5.0 0.2 0.5 6.0 4.0 c ibo c obo 7.0 5.0 -0.2 -0.5 -5.0 -10 -20 -50 t j = 25 c c ibo c obo 20 10 i c , collector current (ma) 200 100 50 20 10 i c , collector current (ma) -10 -5.0 500 200 100 50 20 10 -100 100 t, time (ns) t, time (ns) 50 200 500 1.0 k 500 v cc = 40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r -50 -200 -500 1.0 k 5.0 7.0 30 70 300 700 30 70 t d @ v be(off) = 0.5 v 300 700 70 30 -7.0 -300 -70 -20 -30 v cc = -40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r t d @ v be(off) = -0.5 v c, capacitance (pf) 300 .com .com .com .com .com 4 .com u datasheet
mpsa05, mpsa06, mpsa55, MPSA56 http://onsemi.com 4 figure 8. mpsa05/06 active?region safe operating area figure 9. mpsa55/56 active?region safe operating area figure 10. mpsa05/06 dc current gain figure 11. mpsa55/56 dc current gain figure 12. mpsa05/06 aono voltages figure 13. mpsa55/56 aono voltages 2.0 500 0.5 i c , collector current (ma) 400 200 100 80 60 40 10 , dc current gain npn pnp t j = 125 c 10 500 1.0 i c , collector current (ma) 1.0 0.8 0.6 0.4 0.2 0 100 t j = 25 c v, voltage (volts) v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v 10 1.0 v ce , collector-emitter voltage (volts) 500 200 100 50 20 10 v ce , collector-emitter voltage (volts) -10 -50 -1.0 -500 -200 -100 -50 -20 -10 -20 30 i c , collector current (ma) -2.0 -5.0 -1.0 k 2.0 5.0 50 1.0 k i c , collector current (ma) 1.0 ms 1.0 s t a = 25 c mpsa05 current limit thermal limit second breakdown limit mpsa06 100 70 20 3.0 7.0 100 s t c = 25 c 1.0 3.0 5.0 v ce = 1.0 v 20 100 30 50 200 300 h fe 25 c -55 c 0.5 2.0 5.0 200 20 50 -2.0 -500 -0.5 i c , collector current (ma) 400 200 100 80 60 40 -10 , dc current gain t j = 125 c -1.0 -5.0 v ce = -1.0 v -20 -100 -50 -200 h fe 25 c -55 c -10 -500 -1.0 i c , collector current (ma) -1.0 -0.8 -0.6 -0.4 -0.2 0 -100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -1.0 v -0.5 -2.0 -5.0 -200 -20 -50 700 300 30 70 1.0 ms 1.0 s t a = 25 c mpsa55 current limit thermal limit second breakdown limit MPSA56 100 s t c = 25 c -3.0 -7.0 -30 -100 -70 -30 -70 -300 -700 .com .com .com .com .com 4 .com u datasheet
mpsa05, mpsa06, mpsa55, MPSA56 http://onsemi.com 5 figure 14. mpsa05/06 collector saturation region figure 15. mpsa55/56 collector saturation region figure 16. mpsa05/06 base?emitter temperature coefficient figure 17. mpsa55/56 base?emitter temperature coefficient 100 500 0.5 i c , collector current (ma) -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 i c , collector current (ma) 0.1 10 0.05 i b , base current (ma) 1.0 0.8 0.6 0.4 0.2 0 i b , base current (ma) 1.0 t j = 25 c r vb , temperature coefficient (mv/ c) npn pnp 10 r vb for v be r vb , temperature coefficient (mv/ c) 50 i c = 100 ma i c = 50 ma i c = 250 ma i c = 500 ma i c = 10 ma , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) v ce 1.0 2.0 5.0 20 50 200 20 2.0 5.0 0.2 0.5 -100 -500 -0.5 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -10 r vb for v be -1.0 -2.0 -5.0 -20 -50 -200 -0.1 -10 -0.05 -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 t j = 25 c -50 i c = -100 ma i c = -50 ma i c = -250 ma i c = -500 ma i c = -10 ma -20 -2.0 -5.0 -0.2 -0.5 figure 18. mpsa05, mpsa06, mpsa55 and MPSA56 thermal response t, time (ms) 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k 0.03 0.02 0.1 0.07 0.05 0.01 0.3 0.2 1.0 0.7 0.5 r(t), normalized transient thermal resistance z q jc (t) = r(t) ? r q jc t j(pk) - t c = p (pk) z q jc (t) z q ja (t) = r(t) ? r q ja t j(pk) - t a = p (pk) z q ja (t) d curves apply for power pulse train shown read time at t 1 (see an469) t 1 t 2 duty cycle, d = t 1 /t 2 p (pk) d = 0.5 0.2 0.1 0.02 0.01 single pulse single pulse 0.05 .com .com .com .com .com 4 .com u datasheet
mpsa05, mpsa06, mpsa55, MPSA56 http://onsemi.com 6 package dimensions to?92 to?226aa case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector style 14: pin 1. emitter 2. collector 3. base .com .com .com .com .com 4 .com u datasheet
mpsa05, mpsa06, mpsa55, MPSA56 http://onsemi.com 7 notes .com .com .com .com .com 4 .com u datasheet
mpsa05, mpsa06, mpsa55, MPSA56 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4?32?1 nishi?gotanda, shinagawa?ku, tokyo, japan 141?0031 phone : 81?3?5740?2700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mpsa05/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 800?282?9855 toll free usa/canada .com .com .com .com 4 .com u datasheet
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